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| N Channel Enhancement Mode MOSFET ST3406 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 30V/5.4A, RDS(ON) = 26m(Typ.) @VGS = 10V 30V/4.6A, RDS(ON) = 36m @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 D G 1 1.Gate 2.Source S 2 3.Drain PART MARKING SOT-23-3L 3 A6YA 1 Y: Year Code 2 A: Week Code ORDERING INFORMATION Part Number ST3406S23RG Package SOT-23-3L Part Marking A6YA Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ST3406S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb - Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406 2006. V1 N Channel Enhancement Mode MOSFET ST3406 5.4A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range Thermal Resistance-Junction to Ambient TA=25 TA=70 TA=25 TA=70 Symbol VDSS VGSS ID IDM IS PD TJ TSTG RJA Typical 30 20 5.4 3.2 25 1.7 2.0 1.3 150 -55/150 90 Unit V V A A A W /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406 2006. V1 N Channel Enhancement Mode MOSFET ST3406 5.4A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol Condition Min Typ Max Unit V(BR)DSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VSD VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=0V,VGS=20V VDS=24V,VGS=0V VDS=24V,VGS=0V TJ=55 VDS5V,VGS=4.5V VGS=10V,ID=4.0A VGS=4.5V,ID=3.6A VDS=4.5V,ID=5.4A IS=1.7A,VGS=0V 30 1.0 3.0 100 1 10 10 26 36 V V nA uA A 33 41 m S 12 0.8 1.2 V Qg Qgs Qgd Ciss Coss Crss td(on) tr VDS=15V VGS=10V ID6.7A VDS=15V VGS=0V F=1MHz VDD=15V RL=15 ID=1.0A VGEN=10V RG=6 10 1.6 3.1 450 240 38 7 10 20 11 18 nC pF 15 20 40 20 nS td(off) tf STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406 2006. V1 N Channel Enhancement Mode MOSFET ST3406 5.4A TYPICAL CHARACTERICTICS (25 unless otherwise noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406 2006. V1 N Channel Enhancement Mode MOSFET ST3406 5.4A TYPICAL CHARACTERICTICS (25 unless otherwise noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406 2006. V1 N Channel Enhancement Mode MOSFET ST3406 5.4A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com ST3406 2006. V1 |
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